Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

被引：66

作者：

Baik, JM ^{[1
]}

Jang, HW ^{[1
]}

Kim, JK ^{[1
]}

Lee, JL ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1541111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent annealing. The ferromagnetic property was obtained after annealing at 800 degreesC. This was attributed to the formation of Ga-Mn magnetic phases. Higher temperature annealing at 900 degreesC reduced the ferromagnetic signal and produced antiferromagnetic Mn-N compounds such as Mn6N2.58 and Mn3N2, leaving N vacancies. This provides evidence that N vacancies play a critical role in weakening the ferromagnetic property in the Mn-implanted GaN. (C) 2003 American Institute of Physics.

引用

页码：583 / 585

页数：3

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