Heteroepitaxy growth high performance films of perylene diimide derivatives

被引：27

作者：

Huang, Lizhen ^{[1
,2
]}

Zhu, Feng ^{[1
]}

Liu, Chengfang ^{[1
,2
]}

Wang, Haibo ^{[1
]}

Geng, Yanhong ^{[1
]}

Yan, Donghang ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Chem & Phys, Changchun 130022, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Organic semiconductor films; Perylene diimide derivatives; Heteroepitaxy; Organic thin film transistors; Weak epitaxy growth; CHANNEL ORGANIC SEMICONDUCTORS; WEAK EPITAXY GROWTH; N-CHANNEL; BUILDING-BLOCKS; THIN-FILMS; TRANSISTORS; MOBILITY; ELECTRONICS; STABILITY; SUBSTRATE;

D O I：

10.1016/j.orgel.2009.10.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High performance films of phenyl substituted perylene diimide are obtained by heteroepitaxy growth through Weak Epitaxy Growth technique. As epitaxially grown on the para-sexiphenyl (p-6P) ordered layers, the N,N'-di-phenyl perylene tetracarboxylic diimide (PTCDI-Ph) grows to form continuous and highly oriented films with large grain size, which possess low density of grain boundary and smooth surface. This quality films bring about improvement of two orders of magnitude in mobility compare to the traditional films, and present relative good air stability. Ambipolar transport behavior was also observed as tuning the thickness of p-6P. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：195 / 201

页数：7

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