Observation of discrete dopant potential and its application to Si single-electron devices

被引：18

作者：

Tabe, Michiharu ^{[1
]}

Moraru, Daniel ^{[1
]}

Ligowski, Maciej ^{[1
,2
]}

Anwar, Miftahul ^{[1
]}

Yokoi, Kiyohito ^{[1
]}

Jablonski, Ryszard ^{[2
]}

Mizuno, Takeshi ^{[1
]}

机构：

[1] Shizuoka Univ, Res Inst Elect, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

[2] Warsaw Univ Technol, Div Sensors & Measuring Syst, PL-02525 Warsaw, Poland

来源：

THIN SOLID FILMS | 2010年 / 518卷

关键词：

Single-electron transfer; Quantum dots; Single dopant potential; Silicon-on-insulator; Kelvin probe force microscope; MICROSCOPY;

D O I：

10.1016/j.tsf.2009.10.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-electron devices are attractive because of their ultimate capabilities such as single-electron transfer, single-electron memory, single-photon detection and high sensitivity to elemental amount of charge. We studied single-electron transport in doped nanoscale-channel field-effect transistors in which the channel potential is modulated by ionized dopants. These devices work as arrays of quantum dots with dimensions below present lithography limits. We demonstrate the ability of dopant-induced quantum dot arrays to mediate the transfer of individual electrons one at a time (single-electron transfer). We also monitored the actual dopant distribution and observed single dopant potentials using low temperature Kelvin probe force microscopy. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S38 / S43

页数：6

共 22 条

[11] SINGLE-ELECTRON TRANSISTORS - ELECTROSTATIC ANALOGS OF THE DC SQUIDS
LIKHAREV, KK
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (02) : 1142 - 1145
[12] Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
Moraru, Daniel
Ono, Yukinori
Inokawa, Hiroshi
Tabe, Michiharu
[J]. PHYSICAL REVIEW B, 2007, 76 (07)
[13] Simultaneous measurement of potential and dopant atom distributions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
Nishizawa, M.
Bolotov, L.
Kanayama, T.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (12)
[14] KELVIN PROBE FORCE MICROSCOPY
NONNENMACHER, M
OBOYLE, MP
WICKRAMASINGHE, HK
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (25) : 2921 - 2923
[15] Nuryadi R, 2006, PHYS REV B, V73, DOI 10.1103/PhysRevB.73.045310
[16] Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
Ono, Y.
Nishiguchi, K.
Fujiwara, A.
Yamaguchi, H.
Inokawa, H.
Takahashi, Y.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (10)
[17] Manipulation and detection of single electrons for future information processing
Ono, Y
Fujiwara, A
Nishiguchi, K
Inokawa, H
Takahashi, Y
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
[18] SINGLE ELECTRON PUMP FABRICATED WITH ULTRASMALL NORMAL TUNNEL-JUNCTIONS
POTHIER, H
LAFARGE, P
ORFILA, PF
URBINA, C
ESTEVE, D
DEVORET, MH
[J]. PHYSICA B, 1991, 169 (1-4): : 573 - 574
[19] Where do the dopants go?
Roy, S
Asenov, A
[J]. SCIENCE, 2005, 309 (5733) : 388 - 390
[20] Transport spectroscopy of a single dopant in a gated silicon nanowire
Sellier, H.
Lansbergen, G. P.
Caro, J.
Rogge, S.
Collaert, N.
Ferain, I.
Jurczak, M.
Biesemans, S.
[J]. PHYSICAL REVIEW LETTERS, 2006, 97 (20)

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