Photoinduced phenomena in mAs2S3•nAs2Se3 amorphous films and their application in micro-optics technology

被引：5

作者：

Manevich, M.

Lyubin, V.

Klebanov, M.

Broder, J.

Eisenberg, N. P.

Dror, R.

Feigel, A.

Sfez, B.

机构：

[1] Jerusalem Coll Technol, Electroopt Dept, IL-91160 Jerusalem, Israel

[2] Ben Gurion Univ Negev, Dept Phys, IL-84105 Beer Sheva, Israel

[3] NRC Soreq, Electroopt Div, IL-81800 Yavne, Israel

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2007年 / 68卷 / 5-6期

关键词：

chalcogenides; thin films; vapor deposition; electron microscopy; optical properties;

D O I：

10.1016/j.jpcs.2006.11.015

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Photoinduced phenomena, such as photoclarkening, photorefraction, and photodissolution, were studied in different compositions of three-component mAs(2)S(3) (.) nAs(2)Se(3) amorphous films. The main emphasis was on the effect of photoinduced change of dissolution rate since this effect is the basis of many applications of amorphous chalcogervide films. The results of the investigation were compared with photoinduced effects in binary As2S3 and As2Se3 films. Advanced micro-optical devices: micro-lens and micro-mirror arrays, diffractive gratings, and photonic bandgap crystals, based on three-component amorphous films which possessed optimal photodissolution characteristics were developed. The primary parameters of the micro-optical devices developed are discussed. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：931 / 935

页数：5

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