Threshold Voltage Compensation Error in Voltage Programmed AMOLED Displays

被引：15

作者：

Bagheri, Mojtaba ^{[1
]}

Cheng, Xiang ^{[1
]}

Zhang, Junhao ^{[1
]}

Lee, Sungsik ^{[1
]}

Ashtiani, Shahin ^{[2
]}

Nathan, Arokia ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] Univ Tehran, Sch Elect & Comp Engn, Tehran, Iran

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2016年 / 12卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

Active-matrix organic light-emitting diode (AMOLED); amorphous silicon (a-Si); compensation; oxide thin-film transistor (TFT); THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; A-SI; PIXEL CIRCUIT; EXTRACTION;

D O I：

10.1109/JDT.2016.2530784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new accurate voltage-programmed pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays is presented. Composed of three TFTs and one storage capacitor, the proposed pixel circuit is implemented both in a-Si and a-IGZO TFT technologies for the same pixel size for fair comparison. The simulation result for the a-Si-based design shows that, during a programming time of 90 mu s, the pixel circuit was able to compensate for a 3 V threshold voltage (V-th) shift of the drive TFT with almost no error. In contrast, the a-IGZO-based pixel circuit, has a larger current error (of around 8%), despite its proven three-fold higher speed.

引用

页码：658 / 664

页数：7

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