Molecular dynamics simulation of Co thin films growth on Cu(001)

被引：35
|
作者：
Levanov, N
Stepanyuk, VS
Hergert, W
Trushin, OS
Kokko, K
机构：
[1] Martin Luther Universitat Halle Wittenberg, Fachbereich Phys, D-06099 Halle, Germany
[2] Moscow State Univ, Dept Phys, Moscow 117234, Russia
[3] Russian Acad Sci, Inst Microelect, Yaroslavl 150007, Russia
[4] Turku Univ, Dept Phys, FIN-20014 Turku, Finland
来源：
SURFACE SCIENCE | 1998年 / 400卷 / 1-3期
基金：
芬兰科学院;
关键词：
growth; molecular dynamics; surface structure; morphology; roughness; and topology;
D O I：
10.1016/S0039-6028(97)00841-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Results of MD simulations of the structure of ultrathin films of Co on Cu(001) are presented. Growth conditions corresponding vacuum evaporation as well as lasts ablation are considered. The dynamics of the growth process and the structure of the as-deposited films are investigated as a. function of the kinetic energy of adatoms. The effect of Fast interdiffusion due to a high impact energy is observed. Tight-binding potentials in the second-moment approximation are used. Co-Cu interaction parameters are determined From ab-initio electronic structure calculations. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：54 / 62
页数：9
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