Studies on the heterostructure of Fe film on Si substrate

被引：0
作者：
Ge, YF [2 ]
Zhang, R
Xiu, XQ
Xie, ZL
Gu, SL
机构：
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Jiangsu Key Lab Photon & Elect Mat Sci & Technol, Nanjing 210093, Peoples R China
来源：
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5 | 2005年 / 475-479卷
关键词：
iron film; Si substrate; iron oxidation; magnetic properties;
D O I：
10.4028/www.scientific.net/MSF.475-479.3753
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
films have been grown on different oriented Si substrates by metal organic chemical vapor deposition (MOCVD), and then samples are put in the air without any protection for nearly fifteen years. In this paper, using methods such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM), we make a detailed research on the samples. We identify the composition and structure of the epitaxial films on different oriented substrates and compare the difference both in composition and magnetic properties. Different orientation of the substrates results in different epitaxial film with different characteristic. We also confirm the existence of single crystal iron in the heteroepitaxial film grown on Si (001), and discuss the possible reason why the single crystal iron film still exists without complete oxidation in air for such a long time.
引用
收藏
页码：3753 / 3756
页数：4
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