Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator

被引:110
|
作者
Lee, Han Eol [1 ]
Choi, JeHyuk [2 ]
Lee, Seung Hyun [1 ]
Jeong, Minju [3 ]
Shin, Jung Ho [1 ]
Joe, Daniel J. [1 ]
Kim, DoHyun [2 ]
Kim, Chang Wan [2 ]
Park, Jung Hwan [1 ]
Lee, Jae Hee [1 ]
Kim, Daesoo [3 ]
Shin, Chan-Soo [2 ]
Lee, Keon Jae [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 34141, South Korea
[2] Korea Adv Nanofab Ctr KANC, Device Technol Dev Div, Photon Device Lab, 109 Gwanggyo Ro, Suwon 16229, Gyeonggi Do, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Biol Sci, 291 Daehak Ro, Daejeon 34141, South Korea
基金
新加坡国家研究基金会;
关键词
bioelectronics; flexible GaN vertical light-emitting diodes; light-emitting diodes; transparent micro-light-emtting-diodes; wireless power transfer; LED ARRAY; FABRICATION; DEVICES; OUTPUT;
D O I
10.1002/adma.201800649
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Flexible inorganic-based micro light-emitting diodes (mu LEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral mu LEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical LEDs (f-VLEDs) with high optical power (30 mWmm(-2)), long lifetime (approximate to 12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain.
引用
收藏
页数:10
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