Chromatic Dispersion in InGaAsP Semiconductor Optical Amplifiers

被引：9
作者：
Runge, Patrick [1 ]
Elschner, Robert [1 ]
Petermann, Klaus [1 ]
机构：
[1] Tech Univ Berlin, Fachgebiet Hochfrequenztech, D-10587 Berlin, Germany
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2010年 / 46卷 / 05期
关键词：
Chromatic dispersion; group velocity dispersion (GVD); InGaAsP; refractive index; semiconductor optical amplifiers; REFRACTIVE-INDEX; LASER AMPLIFIERS; INP; GAAS; GAP;
D O I：
10.1109/JQE.2010.2046722
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Chromatic dispersion for typical InGaAsP buried semiconductor optical amplifiers waveguide structures is investigated. Opposite to earlier estimations of the chromatic dispersion, we calculate a value of 30 fs/mm/nm around the band gap wavelength of 1550 nm. Moreover, the dependence of the chromatic dispersion on the carrier density and the lattice temperature is estimated. Since the mode confinement affects the composite material dispersion, the chromatic dispersion also depends on the polarization of the mode.
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页码：644 / 649
页数：6
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