Low temperature FIB cross section: Application to indium micro bumps

被引：14

作者：

de Morais, L. Dantas ^{[1
]}

Chevalliez, S. ^{[1
]}

Mouleres, S. ^{[1
]}

机构：

[1] SOFRADIR, Actipole, F-38113 Veurey Voroize, France

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

Failure analysis; Indium micro bump; Cryogenic FIB;

D O I：

10.1016/j.microrel.2014.08.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the interest of low temperature FIB cross section on indium micro bump. Experimental setup and results which demonstrate the interest of cooling the sample are detailed. We will explain the artefacts observed during FIB milling at room temperature. The Ga ions interact with indium to create locally an eutectic alloy, with melting point below room temperature. Inside the vacuum chamber, this eutectic alloys sublimates quickly and voids appear in the cross section. Cooling the sample with cryogenic stage enables to perform "clean" cross section without these artefacts. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1802 / 1805

页数：4