Photoluminescence of Eu3+-Doped Ba0.7Sr0.3TiO3 Thin Film for Optoelectronic Application

被引：20

作者：

Reshmi, R. ^{[1
]}

Jayaraj, M. K. ^{[1
]}

Jithesh, K. ^{[2
]}

Sebastian, M. T. ^{[2
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Optoelect Devices Lab, Kochi 682022, India

[2] Natl Inst Interdisciplinary Sci & Technol, Thiruvananthapuram 695019, Kerala, India

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 07期

关键词：

barium compounds; crystal structure; europium; ferroelectric thin films; optoelectronic devices; photoluminescence; pulsed laser deposition; strontium compounds; ROOM-TEMPERATURE; NANOCRYSTALLINE BATIO3; STRONTIUM-TITANATE; LUMINESCENCE; SRTIO3; NANOPARTICLES; DEPENDENCE; CERAMICS; EMISSION; ALUMINA;

D O I：

10.1149/1.3432564

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The europium-doped barium strontium titanate (BST:Eu) films find application in ferroelectric as well as in optoelectronic devices. In this paper, we report the pulsed laser deposition (PLD) of BST:Eu thin films. The structural and optical properties of the PLD-grown BST film have been investigated and correlated. The photoluminescence spectra show the prominent transitions of Eu3+ ions at 550 nm (D-5(1)-F-7(2)), 615 nm (D-5(0)-F-7(2)), and 669 nm (D-5(0)-F-7(3)) upon excitation with 408 nm. The luminescent properties of BST:Eu thin films follow a close correlation with the crystallinity of the thin films. Films deposited at a lower substrate temperature show good luminescent characteristics. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3432564] All rights reserved.

引用

页码：H783 / H786

页数：4

共 24 条

[1] THE EFFECT OF MN ON THE POSITIVE TEMPERATURE-COEFFICIENT OF RESISTANCE CHARACTERISTICS OF DONOR DOPED BATIO3 CERAMICS [J].

ALALLAK, HM ;

BRINKMAN, AW ;

RUSSELL, GJ ;

WOODS, J .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4530-4535

[2] Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications [J].

Chen, CL ;

Feng, HH ;

Zhang, Z ;

Brazdeikis, A ;

Huang, ZJ ;

Chu, WK ;

Chu, CW ;

Miranda, FA ;

Van Keuls, FW ;

Romanofsky, RR ;

Liou, Y .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :412-414

[3] Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters [J].

Chen, CL ;

Shen, J ;

Chen, SY ;

Luo, GP ;

Chu, CW ;

Miranda, FA ;

Van Keuls, FW ;

Jiang, JC ;

Meletis, EI ;

Chang, HY .

APPLIED PHYSICS LETTERS, 2001, 78 (05) :652-654

[4] LOCAL-CHARGE AND DISTANT-CHARGE COMPENSATION OF EU-3+ IONS IN DEFECT CENTERS OF SRTIO3 [J].

COCKROFT, NJ ;

WRIGHT, JC .

PHYSICAL REVIEW B, 1992, 45 (17) :9642-9655

[5] Time-dependence of luminescence of nanoparticles of Eu2O3 and Tb2O3 deposited on and doped in alumina [J].

Gedanken, A ;

Reisfeld, R ;

Sominski, L ;

Zhong, Z ;

Koltypin, Y ;

Panczer, G ;

Gaft, M ;

Minti, H .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :945-947

[6] Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films [J].

Kuo, SY ;

Chen, CS ;

Tseng, TY ;

Chang, SC ;

Hsieh, WF .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) :1868-1872

[7] Room temperature photoluminescence of amorphous BaxSr1-xTiO3 doped with chromium [J].

Melo, DMA ;

César, A ;

Martinelli, AE ;

Silva, ZR ;

Leite, ER ;

Longo, E ;

Pizanni, PS .

JOURNAL OF SOLID STATE CHEMISTRY, 2004, 177 (03) :670-674

[8] PHOTOLUMINESCENCE IN NANOCRYSTALLINE BATIO3 AND SRTIO3 [J].

MENG, JF ;

HUANG, YB ;

ZHANG, WF ;

DU, ZL ;

ZHU, ZQ ;

ZOU, GT .

PHYSICS LETTERS A, 1995, 205 (01) :72-76

[9] Characteristic enhancement of emission from SrTiO3:Pr3+ by addition of group-IIIb ions [J].

Okamoto, S ;

Yamamoto, H .

APPLIED PHYSICS LETTERS, 2001, 78 (05) :655-657

[10] High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates [J].

Park, BH ;

Gim, Y ;

Fan, Y ;

Jia, QX ;

Lu, P .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2587-2589

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