A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors

Integration of a perovskite with third-generation semiconductors has attracted extensive attention in numerous fields, such as wireless communication systems and spatial optical communications. Embedding a methyl lead bromide perovskite (CH3NH3PbBr3 or MAPbBr(3)) into nanoporous GaN (NP GaN) would introduce unique optical and electrical properties that aid in overcoming the intrinsic limitation of the materials. In this study, an ultra-high sensitivity MAPbBr(3)/NP GaN hybrid structure device was fabricated for the first time and then the theoretical simulation was carried out using a computational electromagnetic method. The experimental results show that the device has excellent photoresponse characteristics under illumination of UV light of 325 nm at a voltage of 5 V, with a high current on/off ratio of about 5000 and fast response speeds of 0.21/0.44 s, compared with a GaN photodetector under the same conditions. This high performance can be attributed to the built-in electric field (BEF) generated at the interface of the MAPbBr(3) film and NP GaN, which significantly enhanced the light harvesting ability of high-porosity NP GaN. It is expected that such high-performance PDs will have great application potential in the fields of ultraviolet radiation monitoring, space optical communication, and biological analysis.