High-current and broad-beam ion implanter

被引：1

作者：

Guglya, A ^{[1
]}

Drakin, V

Lymar, A

Stervoedov, N

机构：

[1] Kharkov Phys & Technol Inst, Ctr Nat Sci, UA-310108 Kharkov, Ukraine

[2] Kharkov AM Gorkii State Univ, UA-310077 Kharkov, Ukraine

来源：

VACUUM | 2003年 / 70卷 / 2-3期

关键词：

ion implanter; gas ion source;

D O I：

10.1016/S0042-207X(02)00669-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper presents a description of the design of a pilot-plant for the ion implantation "Maestro" and its technical characteristics. This plant is designed for processing of commercial products with beams of gas ions of an energy up to 60 keV at an ion current up to 30 mA. The dependence of ion beam characteristics on the discharge parameters, the value of gas leakage into the discharge chamber, the discharge voltage and, magnetic field value in the discharge chamber are given. The principles of ion beam integration on samples and control of their irradiation dose are described. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：353 / 358

页数：6