Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

The effect of delta-potential was studied in GaAs/Ga0.6Al0.4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the 6 potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the delta-potential, whereas the tunneling life time of electrons highly influenced by the position of the delta-potential and not on the height. These results might be helpful for the fabrication of spin-filters. (C) 2018 Elsevier Ltd. All rights reserved.