Hollow tin/chromium whiskers

被引：24

作者：

Cheng, Jing ^{[1
]}

Vianco, Paul T. ^{[2
]}

Li, James C. M. ^{[1
]}

机构：

[1] Univ Rochester, Mat Sci Program, Rochester, NY 14627 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

基金：

美国能源部;

关键词：

TIN WHISKER; GROWTH;

D O I：

10.1063/1.3419837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tin whiskers have been an engineering challenge for over five decades. The mechanism has not been agreed upon thus far. This experiment aimed to identify a mechanism by applying compressive stresses to a tin film evaporated on silicon substrate with an adhesion layer of chromium in between. A phenomenon was observed in which hollow whiskers grew inside depleted areas. Using focused ion beam, the hollow whiskers were found to contain both tin and chromium. At the bottom of the depleted areas, thin tin/tin oxide film remained over the chromium layer. It indicates that tin transport occurred along the interface between tin and chromium layers. (C) 2010 American Institute of Physics. [doi:10.1063/1.3419837]

引用

页数：3

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