Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers

被引：6

作者：

Ahmed, A ^{[1
]}

Islam, SS ^{[1
]}

Anwar, AFM ^{[1
]}

机构：

[1] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(02)00216-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Volterra series analysis is used to determine gain and output power of GaN HEMT amplifiers. Gain compression defined as the difference between linear and nonlinear gain is reported for varying temperatures. Measured 1-dB gain compression of 17.5 dBm for a 1 mum x 500 mum Al0.15Ga0.85N/GaN HEMT at 300 K and at 2 GHz is in excellent agreement with the calculated value of 17 dBm. With the operating frequency increasing from 1 to 6 GHz the 1-dB gain compression point decreases from 20.5 to 13.8 dBm at 300 K. At 2 GHz the 1-dB gain compression point decreases from 17.5 dBm at 300 K to 6.5 dBm at 600 K. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：339 / 344

页数：6

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