Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV

被引：267

作者：

Hu, Zongyang ^{[1
]}

Nomoto, Kazuki ^{[1
]}

Li, Wenshen ^{[1
]}

Tanen, Nicholas ^{[2
]}

Sasaki, Kohei ^{[3
]}

Kuramata, Akito ^{[3
]}

Nakamura, Tohru ^{[4
]}

Jena, Debdeep ^{[5
]}

Xing, Huili Grace ^{[5
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Novel Crystal Technol Inc, Sayama, Osaka 3501328, Japan

[4] Hosei Univ, Ctr Micronano Technol, Tokyo 1840003, Japan

[5] Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Sch Elect & Comp Engn, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 06期

关键词：

beta-Ga2O3; HVPE; breakdown voltage; MISFET; MOSFET; FinFET; enhancement mode; vertical transistor; power electronics;

D O I：

10.1109/LED.2018.2830184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-voltage vertical Ga2O3 MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on bulk Ga2O3 (001) substrates. The low charge concentration of similar to 10(16) cm(-3) in the n-drift region allows three terminal breakdown voltages to reach up to 1057 V without field plates. The devices operate in the enhancement mode (E-mode) with a threshold voltage of similar to 1.2-2.2V, a current on/off ratio of similar to 108, an on resistance of similar to 13-18m Omega.m(2), and an output current of > 300 A/cm(2). This is the first report of high-voltage vertical Ga2O3 transistors with E-mode operation, a significant milestone toward realizing Ga2O3 based power electronics.

引用

页码：869 / 872

页数：4

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