Composition determination of Si/Si1-xGex/Si by photoreflectance spectroscopy

被引：3

作者：

Chen, CC ^{[1
]}

Kelly, PV ^{[1
]}

Liu, ZH ^{[1
]}

Huang, WT ^{[1
]}

Dou, WZ ^{[1
]}

Tsien, PH ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

METALS AND MATERIALS INTERNATIONAL | 2004年 / 10卷 / 05期

关键词：

SiGe/Si; photoreflectance; UHVCVD;

D O I：

10.1007/BF03027354

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

UHVCVD-grown Si/Si1-xGex/Si heterostructure is investigated by photoreflectance spectroscopy (PR). The principle of PR in determining Ge content of a Si1-xGex epilayer is thoroughly described. The unambiguous E-1 transition energy in the Si1-xGex epilayer is very useful to determine Ge content during PR analysis. R&R study with 10 repeats at the same point indicates that the measurements of PR are reproducible. These results demonstrate that PR is very promising for analysis of Si1-xGex epilayer characterization with constant Ge content.

引用

页码：489 / 492

页数：4

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