Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-μm InAs-GaAs Quantum-Dot Lasers

被引：18
作者：
Ji, Hai-Ming [1 ]
Yang, Tao [1 ]
Cao, Yu-Lian [2 ]
Xu, Peng-Fei [1 ]
Gu, Yong-Xian [1 ]
Wang, Zhan-Guo [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 07期
基金：
国家高技术研究发展计划(863计划); 美国国家科学基金会;
关键词：
DEPENDENCE; WELL;
D O I：
10.1143/JJAP.49.072103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled InAs-GaAs quantum dot (QD) lasers is presented. Lasing spectra under different injected currents, light-current (L-I) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (GS) and excited-state (ES) lasing processes. We show that the self-heating causes the quenching of the GS lasing and the ES lasing by the increased carrier escape rate and the reduced maximum modal gain of GS and ES. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页码：0721031 / 0721034
页数：4
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