Millimeter-Wave Amplifiers in 40-nm CMOS

被引：0
作者：
Wang, Huei [1 ]
Hsiao, Yuan-Hung
Yeh, Kuang-Sheng
Chou, Yu-Ting
Wang, Jun-Kai
Lin, Yu-Hsuan
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
来源：
2016 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC2016) | 2016年
关键词：
RECEIVER; POWER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we will demonstrate several millimeter-wave (MMW) amplifiers using 40-nm CMOS technology, including a 38-GHz power amplifier (PA), 60-GHz high-linearity amplifier (HLA), and a 60 GHz bidirectional amplifier (BDA) for the next generation applications such as internet-of-thing (loT) or the 5G wireless communication.
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页数：4
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