In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells

被引：26

作者：

Scholz, F ^{[1
]}

Sohmer, A

Off, J

Syganow, V

Dornen, A

Im, JS

Hangleiter, A

Lakner, H

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

[2] Gerhard Mercator Univ, Werkstoffe Elektrotech, D-47048 Duisburg, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

GaInN; incorporation efficiency; composition fluctuations;

D O I：

10.1016/S0921-5107(97)00184-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaInN layers play a key role in short wavelength optoelectronic devices for the visible spectrum. However, the epitaxial growth of In containing nitrides is more problematic than that of GaN and AlGaN. In order to increase the In incorporation efficiency, lower growth temperatures of around 700-800 degrees C are needed. We have optimized the metalorganic vapor-phase epitaxial growth of GaInN by decreasing the H-2/N-2 ratio in the gas-phase and increasing the growth rate. However, the deposited films showed strong indications for compositional fluctuations. Besides a large miscibility gap predicted for GaInN, the mismatch induced strain for GaN may play a major role in these growth problems. (C) 1997 Elsevier Science S.A.

引用

页码：238 / 244

页数：7

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