Ground state of the Sn/Ge(111)-3x3 surface and its electron-beam-induced disordering

被引：4

作者：

Shirasawa, Tetsuroh ^{[1
]}

Tochihara, Hiroshi ^{[2
]}

Kubo, Kimitaka ^{[1
]}

Voegeli, Wolfgang ^{[1
]}

Takahashi, Toshio ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] Kyushu Univ, Dept Mol & Mat Sci, Fukuoka 8168580, Japan

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 08期

关键词：

CHARGE-DENSITY-WAVE; DYNAMICAL FLUCTUATIONS; TRANSITION; LEED;

D O I：

10.1103/PhysRevB.81.081409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-energy electron diffraction (LEED) studies at 14 K revealed that the ground state of the Sn/Ge(111)-3 x 3 surface is the so-called one-Sn-up and two-Sn-down (1U2D) structure. The electron beam in the LEED observation was found to disorder the 1U2D structure below similar to 40 K. Cross sections for the structural change suggest that an interband transition between Sn-derived surface state bands becomes the trigger for the structural change. A mechanism of the excitation-induced structural change activated below similar to 40 K is discussed.

引用

页数：4

共 27 条

[1] Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III) [J].

Avila, J ;

Mascaraque, A ;

Michel, EG ;

Asensio, MC ;

LeLay, G ;

Ortega, J ;

Pérez, R ;

Flores, F .

PHYSICAL REVIEW LETTERS, 1999, 82 (02) :442-445

[2] Disproportionation phenomena on free and strained Sn/Ge(111) and Sn/Si(111) surfaces [J].

Ballabio, G ;

Profeta, G ;

de Gironcoli, S ;

Scandolo, S ;

Santoro, GE ;

Tosatti, E .

PHYSICAL REVIEW LETTERS, 2002, 89 (12) :126803-126803

[3] Electron-impact ionization cross sections for elements Z=1 to Z=54 [J].

Bartlett, PL ;

Stelbovics, AT .

ATOMIC DATA AND NUCLEAR DATA TABLES, 2004, 86 (02) :235-265

[4] Phase transitions in two dimensions: The case of Sn adsorbed on Ge(111) surfaces [J].

Bunk, O ;

Zeysing, JH ;

Falkenberg, G ;

Johnson, RL ;

Nielsen, M ;

Nielsen, MM ;

Feidenhans, R .

PHYSICAL REVIEW LETTERS, 1999, 83 (11) :2226-2229

[5] Direct observation of a surface charge density wave [J].

Carpinelli, JM ;

Weitering, HH ;

Plummer, EW ;

Stumpf, R .

NATURE, 1996, 381 (6581) :398-400

[6] Metallic Nature of the α-Sn/Ge(111) Surface down to 2.5 K [J].

Colonna, Stefano ;

Ronci, Fabio ;

Cricenti, Antonio ;

Le Lay, Guy .

PHYSICAL REVIEW LETTERS, 2008, 101 (18)

[7] Comment on "Metallic Nature of the α-Sn/Ge(111) Surface down to 2.5 K'' Reply [J].

Colonna, Stefano ;

Ronci, Fabio ;

Cricenti, Antonio ;

Le Lay, Guy .

PHYSICAL REVIEW LETTERS, 2009, 102 (15)

[8] Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature [J].

Cortés, R ;

Tejeda, A ;

Lobo, J ;

Didiot, C ;

Kierren, B ;

Malterre, D ;

Michel, EG ;

Mascaraque, A .

PHYSICAL REVIEW LETTERS, 2006, 96 (12)

[9] Electron-induced oxygen desorption from the TiO2(011)-2x1 surface leads to self-organized vacancies [J].

Dulub, Olga ;

Batzill, Matthias ;

Solovev, Sergey ;

Loginova, Elena ;

Alchagirov, Alim ;

Madey, Theodore E. ;

Diebold, Ulrike .

SCIENCE, 2007, 317 (5841) :1052-1056

[10] Phonon softening, chaotic motion, and order-disorder transition in Sn/Ge(111) -: art. no. 016103 [J].

Farías, D ;

Kaminski, W ;

Lobo, J ;

Ortega, J ;

Hulpke, E ;

Pérez, R ;

Flores, F ;

Michel, EG .

PHYSICAL REVIEW LETTERS, 2003, 91 (01) :1-016103

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