Energy transport between hole gas and crystal lattice in diluted magnetic semiconductor

被引：0

作者：

Kivioja, J. M. ^{[1
]}

Prunnila, M.

Novikov, S. ^{[1
]}

Kuivalainen, P. ^{[1
]}

Ahopelto, J.

机构：

[1] Aalto Univ, Elect Phys Lab, FIN-02150 Espoo, Finland

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

基金：

芬兰科学院;

关键词：

ferromagnetic semiconductor; WGaAs; carrier-phonon energy relaxation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependent energy transfer rate between hole gas and lattice has been investigated in thin MnxGa1-xAs (x=3.7% and 4.0%) films by heating the hole system with power density P-d and measuring the hole temperature T The heating experiments were carried out in temperature range of 250 mK-1.3 K and the temperature dependency of resistivity provided the hole thermometer. When the hole temperature greatly exceeds the lattice temperature we find that P-d similar to T-n, where n is in the range of 4 - 5.

引用

页码：1241 / +

页数：2

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