Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres

被引:85
作者
Lin, Jin-Han [1 ,2 ]
Patil, Ranjit A. [1 ]
Devan, Rupesh S. [1 ]
Liu, Zhe-An [1 ]
Wang, Yi-Ping [3 ]
Ho, Ching-Hwa [3 ]
Liou, Yung [2 ]
Ma, Yuan-Ron [1 ]
机构
[1] Natl Dong Hwa Univ, Dept Phys, Hualien 97401, Taiwan
[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[3] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, Taipei 106, Taiwan
关键词
HOLLOW SPHERES; PHOTOCATALYTIC ACTIVITY; CONTROLLABLE SYNTHESIS; BAND-GAP; MICROSPHERES; GROWTH; NANOGENERATOR; FABRICATION; ROUTE;
D O I
10.1038/srep06967
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO nanospheres are presented. The PL emissions of the metallic Zn solid nanospheres are mainly dependent on the electron transitions between the Fermi level (E-F) and the 3d band, while those of the semiconducting hollow ZnO nanoballoons are ascribed to the near band edge (NBE) and deep level electron transitions. The PL emissions of the metal-semiconductor concentric solid Zn/ZnO nanospheres are attributed to the electron transitions across the metal-semiconductor junction, from the E-F to the valence and 3d bands, and from the interface states to the valence band. All three nanostructures are excellent room-temperature light emitters.
引用
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页数:8
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