Pt/ZnO nanowire Schottky diodes

被引:121
作者
Heo, YW [1 ]
Tien, LC
Norton, DP
Pearton, SJ
Kang, BS
Ren, F
LaRoche, JR
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1802372
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25 degreesC and very low (1.5 X 10(-10) A, equivalent to 2.35 A cm(-2), at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was similar to6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices. (C) 2004 American Institute of Physics.
引用
收藏
页码:3107 / 3109
页数:3
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