Control of crystal polarity in oxide and nitride semiconductors by interface engineering

被引：8

作者：

Cho, M. W.

Minegishi, T.

Suzuk, T.

Suzuki, H.

Yao, T.

Hong, S. K.

Ko, Hyunchul

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

[3] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea

[4] Univ S Alabama, Dept Elect & Comp Engn, Mobile, AL 36688 USA

来源：

JOURNAL OF ELECTROCERAMICS | 2006年 / 17卷 / 2-4期

关键词：

nitride material; oxide material; polarity;

D O I：

10.1007/s10832-006-7722-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The ZnO-based oxide and GaN-based nitride semiconductors have been explored for applications to photonic devices in the UV wavelength region and high power electronic devices, where the control of crystal polarity is one of the key issues. This paper will deal with the control of crystal polarity in ZnO/GaN heterostructures and ZnO/sapphire heterostructures by interface engineering.

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收藏

页码：255 / 261

页数：7

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