Design of a Semiconductor-based Bipolar Marx Generator

被引：0

作者：

Sack, Martin ^{[1
]}

Hochberg, Martin ^{[1
]}

Mueller, Georg ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Pulsed Power & Microwave Technol, Hermann von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany

来源：

2014 IEEE INTERNATIONAL POWER MODULATOR AND HIGH VOLTAGE CONFERENCE (IPMHVC) | 2014年

关键词：

Semiconductor-based Marx generator; snubber network;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For parametric studies on the electroporation of plant cells a pulse source enabling a waveform generation within a wide parameter range is of advantage. Hence, a semiconductor-based bipolar Marx generator has been designed. IGBT switches have been employed. Switches and control circuitry enable individual stacking of stages to generate stepwise arbitrary waveforms. The paper compares different configurations of semiconductor-based bipolar Marx generators and describes the design of the Marx generator.

引用

页码：664 / 667

页数：4