Enhancement of negative magnetoresistance due to weak localization in In2O3 thin films on Si substrate

被引：4

作者：

Fujimoto, A. ^{[1
]}

Kitamura, M. ^{[2
]}

Kobori, H. ^{[2
]}

Yamasaki, A. ^{[2
]}

Sugimura, A. ^{[2
]}

Ando, A. ^{[3
]}

Kawanaka, H. ^{[3
]}

Naitoh, Y. ^{[3
]}

Shimizu, T. ^{[3
]}

机构：

[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Asahi Ku, Osaka 5358585, Japan

[2] Konan Univ, Dept Phys, Fac Sci & Engn, Nada Ku, Kobe, Hyogo 6588501, Japan

[3] AIST Tsukuba Cent, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 04期

关键词：

In2O3; Oxygen vacancies; RE-magnetron sputtering; Magnetoresistance; Weak localization; INDIUM-OXIDE-FILMS; MAGNETIC-FIELD; TIN OXIDE; MAGNETOCONDUCTANCE; TRANSITION; REGIME;

D O I：

10.1016/j.physe.2009.11.083

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural and electrical properties of In2O3 films on Si (1 0 0) single crystal and a-SiO2 glass substrates grown by RF-magnetron sputtering method were investigated. As the results of X-ray diffraction spectra and atomic force microscope images of the films, we found that In2O3 film on Si has better crystalline quality than that on a-SiO2. Negative magnetoresistance (MR) caused by weak localization effect was observed for both films. The negative MR at 6T of the films on Si is 3.5-10 times larger than that of the ones on a-SiO2 at 4 K. The result indicates that the inelastic scattering time of conduction electrons in the films on Si is much larger than that of the ones on a-SiO2, originating in fewer crystal defects in the films on Si. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

引用

页码：1134 / 1137

页数：4

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