Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

被引：170

作者：

Reshchikov, M. A. ^{[1
]}

Demchenko, D. O. ^{[1
]}

Usikov, A. ^{[2
,3
]}

Helava, H. ^{[2
]}

Makarov, Yu. ^{[2
]}

机构：

[1] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

[2] Nitride Crystals Inc, Deer Pk, NY 11729 USA

[3] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 23期

基金：

美国国家科学基金会;

关键词：

DOPED GAN; DOMINANT ACCEPTOR; PHOTOLUMINESCENCE; VACANCIES; MOBILITY; ENERGY; OXYGEN;

D O I：

10.1103/PhysRevB.90.235203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated C-N defect. The YL band, related to transitions via the -/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the CNON complex.

引用

页数：16

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