Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices

被引：51
作者：
Allerman, A. A. [1 ]
Crawford, M. H. [1 ]
Miller, M. A. [1 ]
Lee, S. R. [1 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 06期
关键词：
Metalorganic chemical vapor deposition; Superlattices; Nitrides; Semiconducting aluminum compounds; AlGaN; LIGHT-EMITTING-DIODES;
D O I：
10.1016/j.jcrysgro.2009.12.047
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the growth and characterization of Mg-doped, short-period superlattices (Mg-SPSLs) consisting of AlN and Al(0.23)Ga(0.77)N epilayers grown by metal-organic vapor phase epitaxy. Superlattices with periods ranging from 10 to 25 angstrom and with an average Al composition of 0.42-0.74 were investigated. Optical transmission measurements showed that these structures have optical transparencies similar to random-alloy Al(x)Ga(1-x)N epilayers of the same average composition. X-ray diffraction (XRD) measurements confirmed that the period and average Al composition of the superlattices were in agreement with targeted values. Additionally. Mg doping of SPSL structures degraded or eliminated satellite peaks that were otherwise observed in the XRD scans of undoped or Si-doped SPSL structures, suggesting that the presence of Mg during growth alters the interfaces of the epilayers. P-type doping typically produced lateral resistivities of less than 10 ohm cm, and notably, a p-type resistivity of 6 ohm cm was measured in a Mg-SPSL structure with an average Al composition of 0.74. Analysis of temperature dependent resistivity showed an activation energy of 29 meV for a Mg-SPSL with an average composition of 0.62 and 18 meV for a Mg-SPSL with a composition of 0.49. The combined optical and electrical characteristics of these p-SPSLs suggest they could be potential candidates for wide bandgap p-type cladding layers in deep-UV laser diode structures. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：756 / 761
页数：6
相关论文
共 15 条
[1]  
*EV AN GROUP SUNN, SIMS MEAS WER MAD
[2]  
Geophert I. D., 1999, ELECTRON LETT, V24, P1109
[3]   AlGaInN-based ultraviolet light-emitting diodes grown on Si(111) [J].
Kipshidze, G ;
Kuryatkov, V ;
Borisov, B ;
Holtz, M ;
Nikishin, S ;
Temkin, H .
APPLIED PHYSICS LETTERS, 2002, 80 (20) :3682-3684
[4]   Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices [J].
Kozodoy, P ;
Hansen, M ;
DenBaars, SP ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 1999, 74 (24) :3681-3683
[5]   Increased electrical activity of Mg-acceptors in AlxGa1-xN/GaN superlattices [J].
Kumakura, K ;
Kobayashi, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB) :L1012-L1014
[6]   Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field [J].
Kumakura, K ;
Makimoto, T ;
Kobayashi, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B) :2428-2430
[7]   Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N [J].
Kuryatkov, V ;
Chandolu, A ;
Borisov, B ;
Kipshidze, G ;
Zhu, K ;
Nikishin, S ;
Temkin, H ;
Holtz, M .
APPLIED PHYSICS LETTERS, 2003, 82 (09) :1323-1325
[8]   Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers [J].
Lee, SR ;
West, AM ;
Allerman, AA ;
Waldrip, KE ;
Follstaedt, DM ;
Provencio, PP ;
Koleske, DD ;
Abernathy, CR .
APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3
[9]   Optical and electrical properties of Mg-doped p-type AlxGa1-xN [J].
Li, J ;
Oder, TN ;
Nakarmi, ML ;
Lin, JY ;
Jiang, HX .
APPLIED PHYSICS LETTERS, 2002, 80 (07) :1210-1212
[10]   InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Kiyoku, H ;
Sugimoto, Y ;
Kozaki, T ;
Umemoto, H ;
Sano, M ;
Chocho, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571
12