Improvement of efficiency and ESD characteristics of ultraviolet light-emitting diodes by inserting AlGaN and SiN buffer layers

被引：8
作者：
Huang, G. S.
Kuo, H. C.
Lo, M. H.
Lu, T. C.
Tsai, J. Y.
Wang, S. C.
机构：
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Dept Photon, Hsinchu 300, Taiwan
[2] Highlink Technol Corp, Hsinchu 350, Taiwan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 305卷 / 01期
关键词：
defects; metalorganic chemical vapor deposition; nitrides; light emitting diodes;
D O I：
10.1016/j.jcrysgro.2007.04.022
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied the effect of the AlGaN insertion and SiN buffer layers of ultraviolet light-emitting diodes (UVLEDs) on efficiency and electrostatic discharge (ESD) characteristics of UVLEDs grown by metalorganic chemical vapor deposition. The etching pit density was reduced from 3.6 x 10(8) cm(-2) in conventional samples to 1.6 x 10(7) cm(-2) in UVLEDs grown with the AlGaN insertion layer and SiN buffer layer. During the ESD tests at the negative biases of 3000 V, the live percentage of UVLEDs increased from 67% in conventional samples to 86% in samples with AlGaN insertion layers and SiN buffer layers. In addition, the device shows a low leakage current of 1.1 x 10(-8) A at -5 V and the light output power was 70% higher than the conventional UVLEDs at an injection current of 20 mA. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：55 / 58
页数：4
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