Study of PMMA recoveries on micrometric patterns replicated by nano-imprint lithography

被引：23
|
作者：
Martin, C [1 ]
Ressier, L [1 ]
Peyrade, JP [1 ]
机构：
[1] LPMC, CNRS, UMR 5830, INSA,Dept Phys, F-31077 Toulouse 04, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
nanoimprint lithography; atomic force microscopy; PMMA;
D O I：
10.1016/S1386-9477(02)00859-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present a study of poly methyl methacrylate (PMMA) mechanical recoveries observed in the center of micro-scale structures replicated by nanoimprint lithography. Atomic force microscopy statistical analysis clearly reveals that the height and width of recoveries increase with the imprint force until a critical force above which they diminish to zero. This phenomenon, due to problems of PMMA resist transport, can be explained as a relaxation, directly after the demolding stage, of the elastic stresses stored by the resist during the imprint stage. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：523 / 525
页数：3
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