Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device

被引：44

作者：

Bhattacharjee, Snigdha ^{[1
]}

Sarkar, Pranab Kumar ^{[1
]}

Prajapat, Manoj ^{[2
]}

Roy, Asim ^{[1
]}

机构：

[1] Natl Inst Technol Silchar, Dept Phys, Silchar 788010, Assam, India

[2] IISER, Dept Phys, Bhopal 462066, Madhya Pradesh, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 26期

关键词：

resistive switching; data retention; endurance; multilevel storage device; non-volatile memory device; NANOTUBE COMPOSITE FILMS; LITHIUM ION BATTERIES; RESISTIVE MEMORY; GRAPHENE OXIDE; LAYER MOS2; RESISTANCE; MONOLAYER; TRANSPORT; ANODE;

D O I：

10.1088/1361-6463/aa71e9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molybdenum disulfide (MoS2) is of great interest for its applicability in various optoelectronic devices. Here we report the resistive switching properties of polymethylmethacrylate embedding MoS2 nano-crystals. The devices are developed on an ITO-coated PET substrate with copper as the top electrode. Systematic evaluation of resistive switching parameters, on the basis of MoS2 content, suggests non-volatile memory characteristics. A decent ON/OFF ratio, high retention time and long endurance of 3 x 10(3), 10(5) s and 10(5) cycles are respectively recorded in a device with 1 weight percent (wt%) of MoS2. The bending cyclic measurements confirm the flexibility of the memory devices with good electrical reliability as well as mechanical stability. In addition, multilevel storage has been demonstrated by controlling the current compliance and span of voltage sweeping in the memory device.

引用

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