Growth of shallow InAs HEMTs with metamorphic buffer

被引：27

作者：

Heyn, C

Mendach, S

Löhr, S

Beyer, S

Schnüll, S

Hansen, W

机构：

[1] Inst Angew Phys, D-20355 Hamburg, Germany

[2] Zentrum Mikrostruct Forsch, D-20355 Hamburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

defects; interfaces; stresses; molecular beam epitaxy; semiconducting indium compounds; high electron mobility transistors;

D O I：

10.1016/S0022-0248(02)02404-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optimized InAs inserted-channel heterostructures with metamorphic buffer for, strain relaxation are fabricated on GaAs. Transmission electron microscopy investigations reveal that an additional superlattice grown prior to the metamorphic buffer reduces undesired defects which results in improved carrier mobilities. The doping level is adjusted to avoid a bypass in the doping layer of the device. Shallow structures with two-dimensional electron system only 19.5 nm below the surface demonstrate a mobility of 160,000 cm(2)/V S. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：832 / 836

页数：5

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