In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate

被引：11

作者：

Chen, Q. ^{[1
]}

Huang, H. ^{[1
]}

Chen, W. ^{[1
]}

Wee, A. T. S. ^{[1
]}

Feng, Y. P. ^{[1
]}

Chai, J. W. ^{[2
]}

Zhang, Z. ^{[2
]}

Pan, J. S. ^{[2
]}

Wang, S. J. ^{[2
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 07期

关键词：

core levels; hafnium compounds; heat treatment; high-k dielectric thin films; plasma materials processing; semiconductor heterojunctions; semiconductor-insulator boundaries; spectral line shift; sputter deposition; surface chemistry; thermal stability; X-ray photoelectron spectra; PRECISE DETERMINATION; 6H-SIC(0001); GROWTH;

D O I：

10.1063/1.3327834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality HfO2 dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO2/graphene/4H-SiC heterojunctions have good thermal stability up to 650 degrees C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO2 and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.

引用

页数：3

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