MICROWAVE FIELD EFFECT TRANSISTOR BASED ON GRAPHENE

被引：0

作者：

Dragoman, M. ^{[1
]}

Deligeorgis, G. ^{[2
]}

Neculoiu, D. ^{[3
]}

Dragoman, D. ^{[4
]}

Konstantinidis, G. ^{[2
]}

Cismaru, A. ^{[1
]}

Plana, R. ^{[5
]}

机构：

[1] Natl Inst Res & Dev Microtechnol IMT Bucharest, POB 38-160, Bucharest 023573, Romania

[2] Fdn Res & Technol Hellas, Iraklion 71110, Hellas, Greece

[3] Univ Politehn Bucuresti, Dept Elect, Bucharest 061071, Romania

[4] Univ Bucharest, Dept Phys, Bucharest 077125, Romania

[5] LAAS CNRS, F-31077 Toulouse 4, France

来源：

2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2 | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present dc and microwave experiments on a graphene-based top-gate field effect transistor. The transistor is acting as an active device far from the Dirac point, and turns into a passive device at the Dirac point, the transistor amplification being suppressed due to lack of carriers. In this way, microwave switches can be implemented based on the specific charge carrier transport in graphene. The maximum stable gain of the transistor is maintained up to 9 GHz, and the mobility of graphene FET is greater than 8000 cm(2)/Vs far from the Dirac point.

引用

页码：279 / 282

页数：4

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