Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

被引：29

作者：

Owen, JHG ^{[1
]}

Miki, K ^{[1
]}

Bowler, DR ^{[1
]}

Goringe, CM ^{[1
]}

Goldfarb, I ^{[1
]}

Briggs, GAD ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

SURFACE SCIENCE | 1997年 / 394卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

chemical vapour deposition; density functional calculations; models of surface chemical reactions; scanning tunneling microscopy; silane; silicon; single crystal epitaxy; surface structure;

D O I：

10.1016/S0039-6028(97)00592-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitaxial dimers is discussed. By the use of our STM to study disilane at the temperatures of interest, and atomistic modelling to calculate structural stability and significant activation barriers, we are able to propose a complete description of the mechanisms which underlie gas-source growth. (C) 1997 Elsevier Science B.V.

引用

页码：79 / 90

页数：12

共 8 条

[1] Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
Goldfarb, I
Owen, JHG
Hayden, PT
Bowler, DR
Miki, K
Briggs, GAD
SURFACE SCIENCE, 1997, 394 (1-3) : 105 - 118
[2] Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen
Owen, JHG
Miki, K
Bowler, DR
Goringe, CM
Goldfarb, I
Briggs, GAD
SURFACE SCIENCE, 1997, 394 (1-3) : 91 - 104
[3] Effects of high B-doping an Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy
Glass, G
Kim, H
Sardela, MR
Lu, Q
Carlsson, JRA
Abelson, JR
Greene, JE
SURFACE SCIENCE, 1997, 392 (1-3) : L63 - L68
[4] Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy
Tsukidate, Y
Suemitsu, M
APPLIED SURFACE SCIENCE, 2001, 175 : 43 - 48
[5] Effects of adsorption kinetics on the low-temperature growth-rate activation energy in Si gas-source molecular beam epitaxy
Nakazawa, H
Suemitsu, M
Miyamoto, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (6A): : L703 - L704
[6] Photo-thermal excitation gas-source MBE growth of super-doped Si:Mn for spin-photonics applications
Nakayama, H
Ohta, H
Kulatov, E
THIN SOLID FILMS, 2001, 395 (1-2) : 230 - 234
[7] C incorporation and segregation during Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3
Foo, YL
Bratland, KA
Cho, B
Soares, JANT
Desjardins, P
Greene, JE
SURFACE SCIENCE, 2002, 513 (03) : 475 - 484
[8] Time-resolved reflection high-energy electron diffraction analysis in initial stage of 3C-SiC growth on Si(001) by gas source molecular beam epitaxy
Hatayama, T
Fuyuki, T
Matsunami, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (10): : 5255 - 5260

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