Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing

被引：11

作者：

Dalton, TJ ^{[1
]}

Fuller, N ^{[1
]}

Tweedie, C ^{[1
]}

Dunn, D ^{[1
]}

Labelle, C ^{[1
]}

Gates, S ^{[1
]}

Colburn, M ^{[1
]}

Chen, ST ^{[1
]}

Tai, L ^{[1
]}

Dellaguardia, R ^{[1
]}

Petrarca, K ^{[1
]}

Dziobkowski, C ^{[1
]}

Kumar, K ^{[1
]}

Siddiqui, S ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Div Res, Yorktown Hts, NY 10598 USA

来源：

PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2004年

关键词：

D O I：

10.1109/IITC.2004.1345724

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Modification of low-k dielectric materials during photoresist plasma stripping was examined using a variety of analytical techniques. These techniques were initially applied to blanket wafers and were subsequently applied to both specially-designed test structures and product structures on patterned wafers. Results of these experiments are presented and analyzed.

引用

页码：154 / 156

页数：3

共 6 条

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[6]

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