Photophysics of Pt-porphyrin electrophosphorescent devices emitting in the near infrared

被引：72
作者：
Sun, Yiru
Borek, Carsten
Hanson, Kenneth
Djurovich, Peter I.
Thompson, Mark E.
Brooks, Jason
Brown, Julie J.
Forrest, Stephen R. [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[3] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[4] Universal Display Corp, Ewing, NJ 08618 USA
[5] Univ So Calif, Dept Chem, Los Angeles, CA 90089 USA
[6] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 21期
关键词：
D O I：
10.1063/1.2740113
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The triplet annihilation dynamics of near infrared organic light-emitting devices are studied with peak electrophosphorescence at a wavelength of 772 nm using a platinum-porphyrin derivative Pt(II)-tetraphenyltetrabenzoporphyrin as dopant. Both the photoluminescent decay transients of the thin films and the quantum efficiency versus current density characteristics of devices using tris(8-hydroxyquinoline) aluminum or 4,4(')-bis(N-carbazolyl)biphenyl (CBP) as hosts are fitted by a model based on triplet-triplet annihilation. When the phosphor is codoped with Ir(III) bis(2-phenyl quinolyl-N,C-2') acetylacetonate in CBP, the quantum efficiency is enhanced, and the observed decrease of efficiency at high current densities is explained by field-induced charge pair dissociation. The external quantum efficiency has a maximum of (8.5 +/- 0.3)%, decreasing to (5.0 +/- 0.3)% at 1 mA/cm(2). (c) 2007 American Institute of Physics.
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页数：3
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