Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

被引：9

作者：

Asubay, Sezai ^{[1
]}

Genisel, Mustafa Fatih ^{[2
,3
]}

Ocak, Yusuf Selim ^{[2
,3
]}

机构：

[1] Dicle Univ, Fac Sci, Dept Phys, TR-21280 Diyarbakir, Turkey

[2] Dicle Univ, Fac Educ, Dept Sci, TR-21280 Diyarbakir, Turkey

[3] Dicle Univ, Sci & Technol Applicat & Res Ctr DUBTAM, TR-21280 Diyarbakir, Turkey

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 28卷

关键词：

Schottky barrier diode; 6H-SiC; Barrier height; Ideality factor; PULSED-LASER DEPOSITION;

D O I：

10.1016/j.mssp.2014.07.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Mo/n-type 6H-SiC/Ni Schottky barrier diode (SBD) was fabricated by sputtering Mo metal on n-type 6H-SiC semiconductor. Before the formation of Mo/n-type 6H-SiC SBD, an ohmic contact was formed by thermal evaporation of Ni on n-type 6H-SiC and annealing at 950 degrees C for 10 min. It was seen that the structure had excellent rectification. The electrical parameters were extracted using its current-voltage (I-V) and capacitance-voltage (C-V) measurements carried out at room temperature. Very high (1.10 eV) barrier height and 1.635 ideality factor values were reported for Mo/n-type 6H-SiC using In plot. The barrier height and series resistance values of the diode were also calculated as 1413 eV and 69 Omega from Norde's functions, respectively. Furthermore, 1.938 eV barrier height value of Mo/n-type 6H-SiC SBD calculated from C-V measurements was larger than the one obtained from I-V data. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：94 / 97

页数：4

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