Enhanced rf power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors.

被引：5

作者：

Magnée, PHC ^{[1
]}

van Rijs, F ^{[1
]}

Dekker, R ^{[1
]}

Hartskeerl, DMH ^{[1
]}

Kemmeren, ALAM ^{[1
]}

Koster, R ^{[1
]}

Huizing, HGA ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2000年

关键词：

D O I：

10.1109/BIPOL.2000.886204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time we show an enhanced rf power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors. By grounding the emitter with a substrate contact to a low-ohmic substrate, the emitter bondwire is effectively short-circuited. At maximum ouput power, 0.5W with a power added efficiency > 60%, an increase in power gain of 2dB, upto 14.5dB, is observed. For 0.2W output power an increase of 5dB, upto 19dB, is observed.

引用

页码：199 / 202

页数：4

共 5 条

[1] INVESTIGATION OF THE TRADEOFF BETWEEN ENHANCED GAIN AND BASE DOPING IN POLYSILICON EMITTER BIPOLAR TRANSISTORS.
Cuthbertson, Alan
Ashburn, Peter
IEEE Transactions on Electron Devices, 1985, ED-32 (11) : 2399 - 2407
[2] Impact of the Emitter Stored Charge on RF Noise of Junction Bipolar Transistors.
Vitale, Francesco
van der Toorn, Ramses
2012 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2012,
[3] EMITTER GUARD-RING STRUCTURE FOR GaAs HIGH-GAIN HETEROJUNCTION BIPOLAR TRANSISTORS.
Zhu, E.J.
Fischer, R.
Henderson, T.
Morkoc, H.
Electron device letters, 1985, EDL-6 (02): : 91 - 93
[4] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN Hfe OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS.
Nakajima, Osaake
Nagata, Koichi
Ito, Hiroshi
Ishibashi, Tadao
Sugeta, Takayuki
Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (08): : 596 - 598
[5] AN INVESTIGATION OF THE TRADEOFF BETWEEN ENHANCED GAIN AND BASE DOPING IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS
CUTHBERTSON, A
ASHBURN, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2399 - 2407

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