UV Enhanced Emission Performance of Low Temperature Grown Ga-Doped ZnO Nanorods

被引：25

作者：

Chang, Shoou-Jinn ^{[1
,2
]}

Duan, Bi-Gui ^{[1
,2
]}

Hsiao, Chih-Hung ^{[1
,2
]}

Liu, Chung-Wei ^{[1
,2
]}

Young, Sheng-Joue ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[3] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2014年 / 26卷 / 01期

关键词：

GZO nanorod; field emitters; hydrothermal; NANOWIRES;

D O I：

10.1109/LPT.2013.2289322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on hydrothermal growth and gallium doping of ZnO (GZO) nanorods for field emitters. The GZO nanorods grown at 90 degrees C were structurally uniform and well oriented with pure wurtzite structure. It was also found that turn-on fields were 5.4 and 3.6 V/mu m while field-enhancement factors beta were 1711 and 9058, for the ZnO nanorods and GZO nanorods grown at 90 degrees C, respectively. In addition, the turn-on electrical field was reduced from 3.6 to 3.15 V/mu m and beta of GZO nanorods was enhanced from 9058 to 13529 by UV illumination.

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收藏

页码：66 / 69

页数：4

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