Luminescence from color centres induced by oxidation and ion irradiation in 4H-SiC

被引：4

作者：

Chakravorty, Anusmita ^{[1
]}

Kabiraj, D. ^{[1
]}

机构：

[1] Interuniv Accelerator Ctr, New Delhi 110067, India

来源：

JOURNAL OF LUMINESCENCE | 2022年 / 244卷

关键词：

4H-SiC surface; Photoluminescence; Color centres/atom-like defects; Oxidation; Thermal annealing; Ion irradiation; COHERENT CONTROL; SILICON-CARBIDE; CATHODOLUMINESCENCE; DEFECT; LAYERS;

D O I：

10.1016/j.jlumin.2021.118713

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the generation of radiative defects, the so-called color centres, in 25 keV He irradiated and thermally oxidized 4H-SiC < 0001 > surface investigated by photoluminescence spectroscopy utilizing 266 nm deepUV excitation. Ion irradiation showed the generation of photoluminescent peaks ascribed to silicon vacancies (V-Si) and unknown defect-related bands (UD3 and UD4). Thermal treatment (200-800 degrees C) resulted in a significant increase of luminescence at an optimal temperature, depending on the initial density of emitters. While thermal oxidation resulted in several other high-brightness color centres, emitting photons even at room temperature. In addition to the defects in the crystalline 4H-SiC lattice, the difference in photoluminescence after oxidation indicates the presence of various other complex surface and interfacial defects.

引用

页数：7

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