Control of wavelength and decay time of photoluminescence for InAs quantum dots grown on InP(311)B using the digital embedding method

被引：0

作者：

Akahane, Kouichi ^{[1
]}

Yamamoto, Naokatsu ^{[1
]}

Umezawa, Toshimasa ^{[1
]}

Kawanishi, Tetsuya ^{[1
]}

Tanaka, Takehiro ^{[2
]}

Nakamura, Shin-Ichi ^{[2
]}

Sotobayashi, Hideyuki ^{[2
]}

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukui Kitamachi, Koganei, Tokyo 1848795, Japan

[2] Aoyama Gakuin Univ, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 2298558, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 04期

关键词：

InAs; InP; molecular beam epitaxy; photoluminescence; quantum dots; superlattices; FABRICATION; LASER;

D O I：

10.1002/pssb.201552483

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A lattice-matched InGaAs and InAlAs superlattice (SL) was used to embed InAs quantum dots (QDs) on an InP(311)B substrate; this is called the digital embedding method (DEM). We controlled the emission wavelength of the InAs QDs by changing the period of the SL or the ratio of the thickness of InGaAs to that of InAlAs. In addition, we investigated the time-resolved photoluminescence (PL) of the InAs QDs using the DEM. The decay time of the PL from the QDs was estimated by fitting a single exponential curve and was 380ps in the DEM sample and 700ps in the reference sample with a conventional InGaAlAs barrier. The decay time was clearly altered by changing the embedding structure. Therefore, carrier dynamics could be controlled using the DEM.

引用

页码：640 / 643

页数：4

共 23 条

[1] Role of A1 in spacer layer on the formation of stacked InAs quantum dot structures on InP(311)B
Akahane, K
Yamamoto, N
Ohtani, N
Okada, Y
Kawabe, M
[J]. JOURNAL OF CRYSTAL GROWTH, 2003, 256 (1-2) : 7 - 11
[2] Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate
Akahane, K
Ohtani, N
Okada, Y
Kawabe, M
[J]. JOURNAL OF CRYSTAL GROWTH, 2002, 245 (1-2) : 31 - 36
[3] Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method
Akahane, Kouichi
Yamamoto, Naokatsu
Kawanishi, Tetsuya
[J]. JOURNAL OF CRYSTAL GROWTH, 2015, 432 : 15 - 18
[4] Wide-band emissions from highly stacked quantum dot structure grown using the strain-compensation technique
Akahane, Kouichi
Yamamoto, Naokatsu
[J]. JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 154 - 157
[5] Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique
Akahane, Kouichi
Yamamoto, Naokatsu
Kawanishi, Tetsuya
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (02): : 425 - 428
[6] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
ARAKAWA, Y
SAKAKI, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
[7] High-gain quantum-dot semiconductor optical amplifier for 1300 nm
Bakonyi, Z
Su, H
Onishchukov, G
Lester, LF
Gray, AL
Newell, TC
Tünnermann, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) : 1409 - 1414
[8] Complete ground state gain recovery after ultrashort double pulses in quantum dot based semiconductor optical amplifier
Dommers, Sabine
Temnov, Vasily V.
Woggon, Ulrike
Gomis, Jordi
Martinez-Pastor, Juan
Laemmlin, Matthias
Bimberg, Dieter
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (03)
[9] Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Heinrichsdorff, F
Mao, MH
Kirstaedter, N
Krost, A
Bimberg, D
Kosogov, AO
Werner, P
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (01) : 22 - 24
[10] Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
Huang, XD
Stintz, A
Hains, CP
Liu, GT
Cheng, J
Malloy, KJ
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (03) : 227 - 229

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