Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks

被引：14

作者：

Li, Xiuyan ^{[1
]}

Yajima, Takeaki ^{[1
]}

Nishimura, Tomonori ^{[1
]}

Nagashio, Kosuke ^{[1
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 18期

关键词：

GATE; DECOMPOSITION; REDUCTION; OXIDE; LAYER; EOT;

D O I：

10.1063/1.4901172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The scavenging kinetics of an ultra-thin SiO2 interface layer (SiO2-IL) in an HfO2/SiO2/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. O-18 tracing experiments demonstrate that the O-atom moves from the SiO2-IL to the HfO2 layer during scavenging. SiO2-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (VO) transferred from the HfO2 reacts with the SiO2, which is in contact with the Si-substrate, is proposed for the SiO2-IL scavenging. (C) 2014 AIP Publishing LLC.

引用

页数：4

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