Investigations on Raman and X-ray photoemission scattering patterns of vanadium-doped SrBi4Ti4O15 ferroelectric ceramics

被引：44

作者：

Zhu, Jun ^{[1
]}

Chen, Xiao-Bing

He, Jun-hui

Shen, Jian-Cang

机构：

[1] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

PHYSICS LETTERS A | 2007年 / 362卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/j.physleta.2006.10.031

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Vanadium incorporation in SrBi4Ti4O15 results in an improvement of electric properties. Raman scattering reveals that V-addition brings about the local disorders of structure, charge, and internal stress. The chemical valence of Bi and Ti does not increase after V-doping. The electric property improvement is originated from the restraint of oxygen vacancies, mobility weakening of the defects, and the vacancies produced at A-site. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：471 / 475

页数：5

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