Efficiency enhancement of i-PERC solar cells by implementation of a laser doped selective emitter

被引：32

作者：

Hallam, Brett ^{[1
,3
]}

Uruena, Angel ^{[2
,3
]}

Russell, Richard ^{[2
]}

Aleman, Monica ^{[2
]}

Abbott, Malcolm ^{[1
]}

Dang, Chi ^{[2
,3
]}

Wenham, Stuart ^{[1
]}

Tous, Loic ^{[2
,3
]}

Poortmans, Jef ^{[2
,3
,4
]}

机构：

[1] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

[2] IMEC, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, B-3000 Louvain, Belgium

[4] UHasselt, B-3590 Diepenbeek, Hasselt, Belgium

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 134卷

关键词：

Laser doping; Laser ablation; Plated contacts; PERC; Selective emitter; SURFACE PASSIVATION; EXCIMER-LASER; REAR SIDE; SILICON; CONTACTS; RECOMBINATION; LAYERS;

D O I：

10.1016/j.solmat.2014.11.028

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we present the incorporation of a laser doped selective emitter into the i-PERC platform at Imec using large area magnetically confined boron-doped Czochralski grown silicon wafers. Cells were fabricated with self-aligned plated n-type contacts with a comparison between the use of a homogenous emitter with contact openings formed by picosecond laser ablation and a selective emitter formed by laser doping with a mode-locked UV laser using various processing speeds. Without modification to other processes in the i-PERC platform, improvements in efficiency of approximately 0.4% absolute were obtained with the inclusion of the selective emitter structure through improvements in open circuit voltage, fill factor and reduced series resistance. This resulted in peak efficiencies of 20.5% using a processing speed for laser doping of 5 m/s. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：89 / 98

页数：10

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