High-quality AlN template grown on a patterned Si(111) substrate

被引：14

作者：

Binh Tinh Tran ^{[1
]}

Hirayama, Hideki ^{[1
]}

Jo, Masafumi ^{[1
]}

Maeda, Noritoshi ^{[1
]}

Inoue, Daishi ^{[2
]}

Kikitsu, Tomoka ^{[2
]}

机构：

[1] RIKEN, Quantum Optodevice Lab, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

[2] RIKEN, Mat Characterizat Support Unit, Ctr Emergent Matter Sci, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 468卷

关键词：

MOCVD; AlN; Pattern; Si; LEDs; SI; 111; GAN FILMS; OVERGROWTH; DEPOSITION; MOVPE;

D O I：

10.1016/j.jcrysgro.2016.12.100

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

To obtain a high-quality AlN template on a Si substrate for high-quantum efficiency AlGaN-based deep-UV LED applications, we fabricated a high-density micro-patterned Si(111) substrate. An about 8-mu m-thick AlN template was grown on the Si(111) substrate in a metal-organic chemical vapor deposition reactor by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth methods. The template had a small Xray full width at half-maximum with rocking curves of 620 and 1141. for the symmetric and asymmetric (002 and 102) planes. A threading dislocation density at the best region as low as 107 cm(-2) was also obtained.

引用

页码：225 / 229

页数：5

共 21 条

[1]

[Anonymous], P ULTR S IUS ROM IT

[2]

Ayers J.E., 2007, Heteroepitaxy of Semiconductors: Theory, Growth and Characterization

[3] Performance Improvement of AIN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications [J].

Binh Tinh Tran ;

Maeda, Noritoshi ;

Jo, Masafumi ;

Inoue, Daishi ;

Kikitsu, Tomoka ;

Hirayama, Hideki .

SCIENTIFIC REPORTS, 2016, 6

[4]

Tran BT, 2014, ELECTRON MATER LETT, V10, P1063

[5] Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate [J].

Binh-Tinh Tran ;

Ming, Chen-Hauw ;

Lin, Kung-Liang ;

Chen, Hao-Ming ;

Wang, Ching-Chian ;

Chen, Chien-Chih ;

Huang, Chih-Yung ;

Chung, Chen-Chen ;

Chang, Edward-Yi .

STUDENT POSTERS (GENERAL) - 222ND ECS MEETING/PRIME 2012, 2013, 50 (48) :1-4

[6] AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate [J].

Cicek, E. ;

McClintock, R. ;

Cho, C. Y. ;

Rahnema, B. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2013, 103 (18)

[7] Competitive growth mechanisms of AlN on Si (111) by MOVPE [J].

Feng, Yuxia ;

Wei, Hongyuan ;

Yang, Shaoyan ;

Chen, Zhen ;

Wang, Lianshan ;

Kong, Susu ;

Zhao, Guijuan ;

Liu, Xianglin .

SCIENTIFIC REPORTS, 2014, 4

[8] 231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire [J].

Hirayama, Hideki ;

Yatabe, Tohru ;

Noguchi, Norimichi ;

Ohashi, Tomoaki ;

Kamata, Norihiko .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[9] 222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties [J].

Hirayama, Hideki ;

Noguchi, Norimichi ;

Kamata, Norihiko .

APPLIED PHYSICS EXPRESS, 2010, 3 (03)

[10] Controlled coalescence of MOVPE grown AlN during lateral overgrowth [J].

Kueller, V. ;

Knauer, A. ;

Zeimer, U. ;

Kneissl, M. ;

Weyers, M. .

JOURNAL OF CRYSTAL GROWTH, 2013, 368 :83-86

← 1 2 3 →