High-quality AlN template grown on a patterned Si(111) substrate

被引：16

作者：

Binh Tinh Tran ^{[1
]}

Hirayama, Hideki ^{[1
]}

Jo, Masafumi ^{[1
]}

Maeda, Noritoshi ^{[1
]}

Inoue, Daishi ^{[2
]}

Kikitsu, Tomoka ^{[2
]}

机构：

[1] RIKEN, Quantum Optodevice Lab, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

[2] RIKEN, Mat Characterizat Support Unit, Ctr Emergent Matter Sci, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 468卷

关键词：

MOCVD; AlN; Pattern; Si; LEDs; SI; 111; GAN FILMS; OVERGROWTH; DEPOSITION; MOVPE;

D O I：

10.1016/j.jcrysgro.2016.12.100

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

To obtain a high-quality AlN template on a Si substrate for high-quantum efficiency AlGaN-based deep-UV LED applications, we fabricated a high-density micro-patterned Si(111) substrate. An about 8-mu m-thick AlN template was grown on the Si(111) substrate in a metal-organic chemical vapor deposition reactor by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth methods. The template had a small Xray full width at half-maximum with rocking curves of 620 and 1141. for the symmetric and asymmetric (002 and 102) planes. A threading dislocation density at the best region as low as 107 cm(-2) was also obtained.

引用

页码：225 / 229

页数：5

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