Photo electromotive force in CdTe:Ge: manifestation of two photorefractive centers

被引：14

作者：

dos Santos, T. O. ^{[2
]}

Frejlich, J. ^{[2
]}

Shcherbin, K. ^{[1
]}

机构：

[1] Natl Acad Sci, Inst Phys, UA-03028 Kiev, Ukraine

[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2010年 / 99卷 / 04期

基金：

巴西圣保罗研究基金会;

关键词：

STATE PHOTOELECTROMOTIVE FORCE; GAAS-CR; VIBRATION; CRYSTALS; AMPLITUDE; GRATINGS; ERASURE;

D O I：

10.1007/s00340-010-3921-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The photo-electromotive-force effect in CdTe:Ge is studied. A nontrivial frequency response with two different cutoff frequencies is found in the sample studied when exposed to 1064 nm wavelength. The experimental results reveal that two photorefractive centers with charge carriers of the same sign participate in the space-charge formation. The data for different frequency ranges are analyzed individually in the frame of a one-level model for monopolar semiconductor. The photorefractive centers important at different frequency ranges are associated with two species known for CdTe:Ge. Two values for the diffusion length evaluated from the experimental data are linked to these centers.

引用

页码：701 / 707

页数：7

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