Thermal conductivity of Bi2(SexTe1-x)3 alloy films grown by molecular beam epitaxy

被引：6

作者：

Yoo, Taehee ^{[1
]}

Lee, Eungkyu ^{[1
]}

Dong, Sining ^{[2
]}

Li, Xiang ^{[2
]}

Liu, Xinyu ^{[2
]}

Furdyna, Jacek K. ^{[2
]}

Dobrowolska, Margaret ^{[2
]}

Luo, Tengfei ^{[1
,3
]}

机构：

[1] Univ Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[3] Univ Notre Dame, Ctr Sustainable Energy, Notre Dame, IN 46556 USA

来源：

APL MATERIALS | 2017年 / 5卷 / 06期

基金：

美国国家科学基金会;

关键词：

ENHANCED THERMOELECTRIC PROPERTIES; TOPOLOGICAL INSULATORS; SEMICONDUCTOR ALLOYS; BISMUTH TELLURIDE; CRYSTAL-STRUCTURE; BI2TE3; TRANSPORT; BI2SE3; INTERFACES; SELENIDE;

D O I：

10.1063/1.4984974

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied the thermal conductivity of Bi2Se3, Bi2Te3, and their alloy Bi-2(SexTe1-x)(3) at room temperature using time-domain thermoreflectance measurements. The Bi-2(SexTe1-x)(3) films with various concentrations of Se and Te prepared by molecular beam epitaxy on GaAs substrates were investigated to study the dependence of thermal conductivity on film composition. We observed that the Bi-2(SexTe1-x)(3) ternary alloys can have much lower thermal conductivity values compared to those of Bi2Se3 and Bi2Te3. These results may provide useful information for developing and engineering low thermal conductivity materials for thermoelectric applications. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.

引用

页数：7

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